The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TK14A55D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK14A55D
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS VGSS
ID
IDP
PD
EAS
IAR EAR Tch Tstg
Rating
550 ±30 14
56
50
521
14 5.
K14A55D Datasheet
