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K20A60U - Silicon N-Channel MOSFET

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TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20A60U Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 20 40 45 144 20 4.
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