K3497 Description
2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3497 High Power Amplifier Application Unit: mm High breakdown voltage: Ensure that the channel temperature does not exceed 150°C.
- Part: K3497
- Manufacturer: Toshiba
- Size: 221.96 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| K3407 | 2SK3407 |