Datasheet4U Logo Datasheet4U.com

K3936 - 2SK3936

Key Features

  • h may cause loss of human life, bodily injury, serious property damage or serious public i.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK3936 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II π-MOS VI) 2SK3936 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 60 nC (typ.) • Fast reverse recovery time: trr = 380 ns (typ.) • Low drain-source ON-resistance: RDS (ON) = 0.2 Ω (typ.) • High forward transfer admittance: |Yfs| = 16.5 S (typ.) • Low leakage current: IDSS = 500 μA (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.