TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK982
High Speed Switching Applications
Analog Switch Applications
Interface Applications
2SK982
Unit: mm
• Excellent switching times: ton = 14 ns (typ.)
• High forward transfer admittance: |Yfs| = 100 mS (min)
@ID = 50 mA
• Low on resistance: RDS (ON) = 0.6 Ω (typ.) @ ID = 50 mA
• Enhancement-mode
• Complementary to 2SJ148
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Drain power dissipation
(Ta = 25°C)
Channel temperature
Storage temperature range
VDS
VGSS
ID
IDP
PD
Tch
Tstg
60
±20
200
800
400
150
−55~150
V
V
mA
mW
°C
°C
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1H
Weight: 0.21 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2007-11-01
