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Toshiba Electronic Components Datasheet

M2GZ47 Datasheet

BI-DIRECTIONAL TRIODE THYRISTOR

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SM2GZ47, SM2GZ47A, SM2JZ47, SM2JZ47A
TOSHIBA BIDIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM2GZ47, SM2GZ47A, SM2JZ47, SM2JZ47A
AC POWER CONTROL APPLICATIONS
Unit: mm
z IT (RMS) = 1A (Ta = 65°C without radiator)
z Gate Trigger Current: IGT = 5mA Max. (TYPE “A”)
z Repetitive Peak OffState Voltage: VDRM = 400V, 600V
z R.M.S OnState Current: IT (RMS) = 2A (Tc = 110°C)
z Isolation Voltage: VISOL = 1500V (AC, t = 60s)
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak
OffState Voltage and
Repetitive Peak
Reverse Voltage
SM2GZ47
SM2GZ47A
SM2JZ47
SM2JZ47A
VDRM
400
600
V
R.M.S OnState
Tc = 110°C
2
Current
IT (RMS)
A
(Full Sine Waveform) Ta = 65°C
1
Peak One Cycle Surge OnState
Current (NonRepetitive)
ITSM
8 (50Hz)
A
8.8 (60Hz)
I2t Limit Value
I2t
0.32
A2s
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
PGM
3
W
PG (AV)
0.3
W
VFGM
10
V
IGM
1.6
A
Tj
40~125
°C
Tstg
40~125
°C
VISOL
1500
V
JEDEC
JEITA
TOSHIBA
13-10H1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
MARKING
M2GZ47
Characteristics
indicator*2
Part No. (or abbreviation code) *1
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No.
(or abbreviation code)
Part No.
M2GZ47
SM2GZ47, SM2GZ47A
*1
M2JZ47
SM2JZ47, SM2JZ47A
Nothing
SM2GZ47, SM2JZ47
*2
A
SM2GZ47A, SM2JZ47A
1
2006-10-27


Toshiba Electronic Components Datasheet

M2GZ47 Datasheet

BI-DIRECTIONAL TRIODE THYRISTOR

No Preview Available !

SM2GZ47, SM2GZ47A, SM2JZ47, SM2JZ47A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak OffState Current
I
II
Gate Trigger Voltage
III
IV
I
SM2GZ47
II
SM2JZ47
III
Gate Trigger
IV
Current
I
SM2GZ47A
II
SM2JZ47A
III
IV
Peak OnState Voltage
Gate NonTrigger Voltage
Holding Current
Thermal Resistance
SYMBOL
TEST CONDITION
MIN TYP. MAX UNIT
IDRM
VDRM = Rated
T2 (+) , Gate (+)
20
µA
1.5
VGT
VD = 12V
RL = 20
T2 (+) , Gate ()
1
V
T2 () , Gate ()
1
T2 () , Gate (+)
T2 (+) , Gate (+)
8
T2 (+) , Gate ()
8
T2 () , Gate ()
8
IGT
VD = 12V
RL = 20
T2 () , Gate (+)
mA
T2 (+) , Gate (+)
5
T2 (+) , Gate ()
5
T2 () , Gate ()
5
T2 () , Gate (+)
VTM
VGD
IH
Rth (ja)
ITM = 3A
VD = Rated, Tc = 125°C
RL = 100
Junction to Ambient, AC
1.7
V
0.2
V
10 mA
55 °C / W
2
2006-10-27


Part Number M2GZ47
Description BI-DIRECTIONAL TRIODE THYRISTOR
Maker Toshiba
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M2GZ47 Datasheet PDF






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