MG100G1FL1
MG100G1FL1 is Silicon NPN Triple Transistor manufactured by Toshiba.
FEATURES
. The Collector is Isolated from Case.
. With Built-in Free Wheeling Diode
. High DC Current Gain : h FE=100(Min. ) (Ic=100A)
. Low Saturation Voltage : Vc E( sat )=2V(Max. ) (Ic=100A
. High Speed
: tf =2As(Max. ) (Ic=100A)
EQUIVALENT CIRCUIT
^ i.^i
35 i
333 10.5 ioi] 10^ 105 n15
/
T| l L°-L_J- L_
33 to
^ CO
B2 O MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Sustaining Voltage
Emitter-Base Voltage
Collector Current
1ms
Base Current
Collector Power Dissipation (Tc=25°C)
Junction Temperature
Storage Temperature Range
Isolation Voltage
Screw Torque
Teminal (M3/M5) Mounting
TOSHIBA
2-68C1A
Weight :...
