Datasheet Summary
High-Power Module Silicon Carbide N-Channel MOSFET
1. Applications
- High-Power Switching
- Motor Controllers (including rail traction)
2. Features
(1) VDSS = 1700 V, ID = 400 A All SiC MOSFET Module(Low loss & High speed switching) (2) Low stray inductance, low thermal resistance, maximum Tch= 150
- , built in thermistor. (3) Enhancement mode. (4) Electrodes are isolated from metal base plate.
3. Packaging and Internal Circuit
Note: P and N terminal should use one screw to fasten in each and AC terminal should use two screws to fasten. Note 1: When the thermistor is not used, pin 1 and pin 2 should be electrically connected to pin 12.
©2021-2023
Toshiba...