* (1) VDSS = 1700 V, ID = 400 A All SiC MOSFET Module(Low loss & High speed switching) (2) Low stray inductance, low thermal resistance, maximum Tch= 150
* , built in thermistor. (3) Enhancement mode. (4) Electrodes are isolated from metal base plate. 3. Packaging and Internal Circuit Note: P and
MG400V2YMS3 Datasheet (555.73 KB)
MG400V2YMS3
555.73 KB
Silicon carbide n-channel mosfet.
High-Power Module Silicon Carbide N-Channel MOSFET MG400V2YMS3 MG400V2YMS3 1. Applications High-Power Switching Motor Controller.
📁 Related Datasheet
MG400V2YS60A IGBT (Toshiba)
MG400V2YS60A IGBT (Mitsubishi Electric)
MG400V2YS60A IGBT (Powerex Power)
MG400V1US51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS (Mitsubishi Electric)
MG400G1UL1 NPN (ETC)
MG400G1UL1 GTR Module (Toshiba)
MG400H1FK1 NPN (ETC)
MG400H1FK1 GTR Module (Toshiba)
MG400H1FL1 NPN (ETC)
MG400H1UL1 NPN (ETC)
