MG400V2YMS3 mosfet equivalent, silicon carbide n-channel mosfet.
(1) VDSS = 1700 V, ID = 400 A All SiC MOSFET Module(Low loss & High speed switching) (2) Low stray inductance, low thermal resistance, maximum Tch= 150 �, built in thermi.
* High-Power Switching
* Motor Controllers (including rail traction)
2. Features
(1) VDSS = 1700 V, ID = 400 A A.
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