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MT3S20P - Silicon NPN Epitaxial Planar Type Transistor

Key Features

  • Low Noise Figure: NF=1.45dB (typ. ) (@f=1GHz).
  • High Gain: |S21e|2=11dB (typ. ) (@f=1GHz) Marking MT3S20P Unit: mm MU Absolute Maximum Ratings (Ta = 25°C) PW-Mini JEDEC - JEITA SC-62.

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Datasheet Details

Part number MT3S20P
Manufacturer Toshiba
File Size 215.71 KB
Description Silicon NPN Epitaxial Planar Type Transistor
Datasheet download datasheet MT3S20P Datasheet

Full PDF Text Transcription for MT3S20P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MT3S20P. For precise diagrams, and layout, please refer to the original PDF.

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications FEATURES • Low Noise Figure: NF=1.45dB (typ.) (...

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Amplifier Applications FEATURES • Low Noise Figure: NF=1.45dB (typ.) (@f=1GHz) • High Gain: |S21e|2=11dB (typ.) (@f=1GHz) Marking MT3S20P Unit: mm MU Absolute Maximum Ratings (Ta = 25°C) PW-Mini JEDEC - JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (Typ.) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Collector power dissipation Junction temperature Storage temperature range VCBO 20 V VCEO 12 V VEBO 1.5 V IC 80 mA IB 10 mA PC 400 mW PC (Note1) 1.8 W Tj 150 °C Tstg −55 to 150 °C Note.

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