| Title | 트랜지스터 - 양극(BJT) - 단일, 프리 바이어스드 NPN - 사전 바이어스됨 50V 100mA 150mW 표면 실장 VESM |
| Description | RN1107MFV to RN1109MFV Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1107MFV/08MFV/09MFV 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Ultra-small package, suited to very high density mounting (3) The integrated bias resistor reduc... |
| Features |
(1) AEC-Q101 qualified (Please see the orderable part number list) (2) Ultra-small package, suited to very high density mounting (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce
system size and assembly time. (4) Toshiba offers transistors with a wide range of resistance to accommodate var...
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| Datasheet |
 RN1109MFV Datasheet - 465.17KB |
| Distributor |
DigiKey |
| Stock | 0 In stock |
| Price |
No price available
|
| BuyNow |
 BuyNow - Manufacturer a Toshiba America Electronic Components RN1109MFV,L3F
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
DigiKey |
No price available |
BuyNow |
|
 Mouser Electronics |
1 units: 0.16 USD 10 units: 0.11 USD 100 units: 0.07 USD 1000 units: 0.031 USD 2500 units: 0.027 USD 8000 units: 0.02 USD 24000 units: 0.019 USD 48000 units: 0.018 USD 96000 units: 0.015 USD |
