| Title | 트랜지스터 - 양극(BJT) - 단일, 프리 바이어스드 NPN - 사전 바이어스됨 50V 100mA 150mW 표면 실장 VESM |
| Description | RN1112MFV, RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1112MFV, RN1113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ... |
| Features |
ht: 1.5 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maxi...
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| Datasheet |
 RN1112MFV Datasheet - 356.96KB |
| Distributor |
DigiKey |
| Stock | 8000 In stock |
| Price |
40000 units: 21.6372 KRW 24000 units: 22.65233 KRW 16000 units: 24.05338 KRW 8000 units: 26.79763 KRW
|
| BuyNow |
 BuyNow - Manufacturer a Toshiba America Electronic Components RN1112MFV,L3F
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
DigiKey |
40000 units: 21.6372 KRW 24000 units: 22.65233 KRW 16000 units: 24.05338 KRW 8000 units: 26.79763 KRW |
BuyNow |
|
 Mouser Electronics |
1 units: 0.2 USD 10 units: 0.137 USD 100 units: 0.087 USD 1000 units: 0.039 USD 2500 units: 0.034 USD 8000 units: 0.025 USD 24000 units: 0.024 USD 48000 units: 0.022 USD 96000 units: 0.019 USD |
