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RN1112MFV Toshiba (https://www.toshiba.com/) Silicon NPN Epitaxial Type Transistors

Toshiba
Description RN1112MFV, RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1112MFV, RN1113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm  Ultra-small package, suited to very high density mounting  Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ...
Features ht: 1.5 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maxi...

Datasheet PDF File RN1112MFV Datasheet 356.96KB

RN1112MFV   RN1112MFV   RN1112MFV  




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