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RN1116MFV Toshiba (https://www.toshiba.com/) Silicon NPN Epitaxial Type Transistors

Toshiba
Description RN1114MFV to RN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1114MFV, RN1115MFV, RN1116MFV, RN1117MFV, RN1118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manufacturing...
Features V 5 RN1115MFV 6 RN1116MFV VEBO 7 V RN1117MFV 15 RN1118MFV 25 IC 100 mA RN1114MFV PC (Note 1) 150 mW to 111M8FV Tj 150 °C Tstg −55 to 150 °C Land Pattern Dimensions (for reference only) Unit: mm 0.5 0.45 1.15 0.4 0.45 0.4 0.4 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/vol...

Datasheet PDF File RN1116MFV Datasheet 780.68KB

RN1116MFV   RN1116MFV   RN1116MFV  




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