RN1118MFV Datasheet | Toshiba

RN1114MFV to RN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1114MFV, RN1115MFV, RN1116MFV, RN1117MFV, RN1118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm - With built-in bias resistors - Simplify circuit design - Reduce a quantity of parts and manufacturing process - plementary to RN2114MFV to RN2118MFV Equivalent Circuit and Bias Resister Values Type No. RN1114MFV RN1115MFV RN1116MFV RN1117MFV RN1118MFV R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 10 10 4.7 10 Absolute Maximum Ratings (Ta = 25°C) VESM 1.BASE 2.EMITTER 3.COLLECTOR JEDEC ― JEITA ― TOSHIBA 1-1Q1S Weight: 1.5 mg (typ.) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1114MFV VCBO V to 1118MFV VCEO RN1114MFV...