RN1130MFV - Silicon NPN Epitaxial Type Transistors

Toshiba

Datasheet Details

Part number	RN1130MFV
Manufacturer	Toshiba
File Size	146.19 KB
Description	Silicon NPN Epitaxial Type Transistors
Datasheet	RN1130MFV Datasheet

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RN1130MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1130MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm  Ultra-small package, suited to very high density mounting  Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost.  A wide range of resistor values is available for use in various circuits.  Complementary to the RN2130MFV Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) 1.BASE VESM 2.EMITTER 3.COLLECTOR JEDEC JEITA TOSHIBA ― ― 1-1Q1S Weight: 1.5 mg (typ.