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RN1131MFV Toshiba (https://www.toshiba.com/) Silicon NPN Epitaxial Type Transistors

Title 트랜지스터 - 양극(BJT) - 단일, 프리 바이어스드 NPN - 사전 바이어스됨 50V 100mA 150mW 표면 실장 VESM
Description RN1131MFV, RN1132MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1131MFV, RN1132MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm  Ultra-small package, suited to very high density mounting  Incorporating a bias resistor into the transistor reduces the number of pa...
Features V IC 100 mA PC (Note1) 150 mW Tj 150 °C Tstg −55 to 150 °C Land Pattern Dimensions (for reference only) Unit: mm 0.5 0.45 1.15 0.4 0.45 0.4 0.4 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in th...

Datasheet PDF File RN1131MFV Datasheet - 172.12KB
Distributor Distributor
DigiKey
Stock 8000 In stock
Price
40000 units: 21.6372 KRW
24000 units: 22.65233 KRW
16000 units: 24.05338 KRW
8000 units: 26.79763 KRW
BuyNow BuyNow BuyNow - Manufacturer a Toshiba America Electronic Components RN1131MFV,L3F

RN1131MFV   RN1131MFV   RN1131MFV  



RN1131MFV Distributor

Distributor Stock Price BuyNow
Distributor
DigiKey
8000
40000 units: 21.6372 KRW
24000 units: 22.65233 KRW
16000 units: 24.05338 KRW
8000 units: 26.79763 KRW
Toshiba America Electronic Components

BuyNow
Distributor
Mouser Electronics
0
1 units: 0.17 USD
10 units: 0.118 USD
100 units: 0.051 USD
1000 units: 0.03 USD
2500 units: 0.027 USD
8000 units: 0.017 USD
24000 units: 0.015 USD
Toshiba America Electronic Components





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