RN1132MFV - Silicon NPN Epitaxial Type Transistors

Toshiba

Download the RN1132MFV datasheet PDF. This datasheet also covers the RN1131MFV variant, as both devices belong to the same silicon npn epitaxial type transistors family and are provided as variant models within a single manufacturer datasheet.

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RN1132MFV silicon npn epitaxial type transistors by Toshiba - Datasheet Preview — Note: The manufacturer provides a single datasheet file (RN1131MFV-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	RN1132MFV
Manufacturer	Toshiba
File Size	172.12 KB
Description	Silicon NPN Epitaxial Type Transistors
Datasheet	RN1132MFV Datasheet

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Other Datasheets by Toshiba

Part Number	Description
RN1130MFV	Silicon NPN Epitaxial Type Transistors
RN1131MFV	Silicon NPN Epitaxial Type Transistors
RN1101	Silicon NPN Epitaxial Type Transistors
RN1101MFV	Silicon NPN Transistor
RN1102	Silicon NPN Epitaxial Type Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RN1131MFV, RN1132MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1131MFV, RN1132MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm  Ultra-small package, suited to very high density mounting  Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost.  A wide range of resistor values is available for use in various circuits.  Complementary to the RN2131MFV, RN2132MFV Equivalent Circuit 1.BASE VESM 2.EMITTER 3.COLLECTOR JEDEC JEITA TOSHIBA ― ― 1-1Q1S Weight: 1.5 mg (typ.