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RN1306 - Silicon NPN Epitaxial Type Transistors

Download the RN1306 datasheet PDF. This datasheet also covers the RN1301 variant, as both devices belong to the same silicon npn epitaxial type transistors family and are provided as variant models within a single manufacturer datasheet.

Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN2301 to RN2306 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN1301 RN1302 RN1303 RN1304 RN1305 RN1306 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RN1301-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RN1306
Manufacturer Toshiba
File Size 1.48 MB
Description Silicon NPN Epitaxial Type Transistors
Datasheet download datasheet RN1306 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RN1301 to RN1306 Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1301/02/03/04/05/06 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN2301 to RN2306 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN1301 RN1302 RN1303 RN1304 RN1305 RN1306 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.
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