RN1425 Datasheet | Toshiba

RN1421 to RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm - High current type (IC (max) = 800 m A) - With built-in bias resistors - Simplify circuit design - Reduce a quantity of parts and manufacturing process - Low VCE (sat) - plementary to RN2421 to RN2427 Equivalent Circuit and Bias Resister Values Type No. RN1421 RN1422 RN1423 RN1424 RN1425 RN1426 RN1427 R1 (kΩ) 1 2.2 4.7 10 0.47 1 2.2 R2 (kΩ) 1 2.2 4.7 10 10 10 10 S-Mini JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 12 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1421 to 1427 RN1421 to 1424 RN1425, 1426 RN1427 RN1421 to 1427 VCBO VCEO VEBO IC PC Tj...