Title | 트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드 2 NPN - 사전 바이어스됨(이중)(에미터 결합) 50V 100mA 250MHz 300mW 표면 실장 SMV |
Description | RN1501 to RN1506 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1501, RN1502, RN1503 RN1504, RN1505, RN1506 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Including two devices in SMV (ultra super mini type with 5 leads) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize e... |
Features |
Storage temperature range
RN1501 to 1506 RN1501 to 1504 RN1505, 1506
RN1501 to 1506
VCBO VCEO
VEBO
IC PC *
Tj Tstg
50
V
50
V
10 V
5
100
mA
300
mW
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this ...
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Datasheet |
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![]() DigiKey |
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1 units: 563 KRW
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