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RN1608 Toshiba (https://www.toshiba.com/) Silicon NPN Epitaxial Type Transistors

Toshiba
Description RN1607 to RN1609 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1607, RN1608, RN1609 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm  Including two devices in SM6 (super-mini-type with six (6) leads)  With built-in bias resistors.  Simplified circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment.  Various re...
Features oltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1607 RN1608 RN1609 VCBO VCEO VEBO IC PC* Tj Tstg 50 V 50 V 6 7 V 15 100 mA 300 mW 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant chang...

Datasheet PDF File RN1608 Datasheet 432.95KB

RN1608   RN1608   RN1608  




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