RN1611 Datasheet | Toshiba

RN1610, RN1611 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1610, RN1611 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm - Including two devices in SM6 (super-mini-type with six (6) leads) - With built-in bias resistors - Simplified circuit design - Reduce a quantity of parts and manufacturing process and miniaturize equipment. - Various resistance values are available to suit various circuit designs. - plementary to RN2610 and RN2611 Equivalent Circuit SM6 JEDEC ― JEITA ― TOSHIBA 2-3N1A Weight: 15 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 mon) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC PC- Tj Tstg 100 m A 300 m W °C - 55 to150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). - Total rating © 2019 Toshiba Electronic Devices & Storage...