RN1705JE Datasheet | Toshiba

RN1701JE~RN1706JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1701JE, RN1702JE, RN1703JE RN1704JE, RN1705JE, RN1706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm - Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. - Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more pact equipment and lowers assembly cost. - A wide range of resistor values is available for use in various circuit designs. - plementary to RN2701JE to RN2706JE Equivalent Circuit and Bias Resistor Values R1 B R2 Type No. RN1701JE RN1702JE RN1703JE RN1704JE RN1705JE RN1706JE R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) JEDEC ― JEITA ― TOSHIBA 2-2P1D Weight: 0.003 g (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 mon) Characteristics Collector-base voltage Collector-emitter voltage RN1701JE to 1706JE Emitter-base voltage RN1701JE to...