Title | 트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드 2 NPN - 사전 바이어스됨(이중)(에미터 결합) 50V 100mA 250MHz 100mW 표면 실장 ESV |
Description | RN1707JE~RN1709JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1707JE, RN1708JE, RN1709JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts c... |
Features |
ng
Unit
Collector-base voltage
VCBO
50
V
RN1707JE to 1709JE
Collector-emitter voltage
VCEO
50
V
RN1707JE
6
Emitter-base voltage
RN1708JE
VEBO
7
V
RN1709JE
15
Collector current
IC
100
mA
Collector power dissipation
PC (Note 1)
100
mW
RN1707JE to 1709JE
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−...
|
Datasheet | RN1707JE Datasheet - 329.67KB |
Distributor |
DigiKey |
Stock | 3499 In stock |
Price |
2000 units: 79.214 KRW 1000 units: 88.756 KRW 500 units: 100.05 KRW 100 units: 135.02 KRW 10 units: 214.9 KRW 1 units: 346 KRW
|
BuyNow | BuyNow - Manufacturer a Toshiba America Electronic Components RN1707JE(TE85L,F) |
Distributor | Stock | Price | BuyNow |
---|---|---|---|
DigiKey |
2000 units: 79.214 KRW 1000 units: 88.756 KRW 500 units: 100.05 KRW 100 units: 135.02 KRW 10 units: 214.9 KRW 1 units: 346 KRW |
BuyNow |
|
Mouser Electronics |
1 units: 0.27 USD 10 units: 0.192 USD 100 units: 0.08 USD 1000 units: 0.05 USD 4000 units: 0.049 USD 8000 units: 0.045 USD |
BuyNow |