| Title | 트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드 2 NPN - 사전 바이어스됨(이중)(에미터 결합) 50V 100mA 250MHz 100mW 표면 실장 ESV |
| Description | RN1707JE~RN1709JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1707JE, RN1708JE, RN1709JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts c... |
| Features |
ng
Unit
Collector-base voltage
VCBO
50
V
RN1707JE to 1709JE
Collector-emitter voltage
VCEO
50
V
RN1707JE
6
Emitter-base voltage
RN1708JE
VEBO
7
V
RN1709JE
15
Collector current
IC
100
mA
Collector power dissipation
PC (Note 1)
100
mW
RN1707JE to 1709JE
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−...
|
| Datasheet |
 RN1709JE Datasheet - 329.67KB |
| Distributor |
DigiKey |
| Stock | 0 In stock |
| Price |
1 units: 606 KRW
|
| BuyNow |
 BuyNow - Manufacturer a Toshiba America Electronic Components RN1709JE(TE85L,F)
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
DigiKey |
1 units: 606 KRW |
BuyNow |
|
 Mouser Electronics |
1 units: 0.39 USD 10 units: 0.274 USD 100 units: 0.113 USD 1000 units: 0.071 USD 4000 units: 0.07 USD 8000 units: 0.058 USD 24000 units: 0.054 USD 48000 units: 0.048 USD 100000 units: 0.046 USD |
