RN1709JE Datasheet | Toshiba

RN1707JE~RN1709JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1707JE, RN1708JE, RN1709JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm - Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. - Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more pact equipment and lowers assembly cost. - A wide range of resistor values is available to use in various circuit designs. - plementary to RN2707JE to RN2709JE Equivalent Circuit and Bias Resistor Values R1 B R2 Type No. RN1707JE RN1708JE RN1709JE R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) JEDEC ― JEITA ― TOSHIBA 2-2P1D Weight:3mg (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 mon) Equivalent Circuit (top view) Characteristics...