RN1964 Datasheet | Toshiba

RN1961 to RN1966 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1961, RN1962, RN1963 RN1964, RN1965, RN1966 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm - Including two devices in US6 (ultra super mini type 6 leads) - With built-in bias resistors. - Simplify circuit design - Reduce a quantity of parts and manufacturing process and miniaturize equipment. - Various resistance values are available to suit various circuit designs. - plementary to RN2961 to RN2966 Equivalent Circuit and Bias Resistor Values Part No. R1 (kΩ) R2 (kΩ) RN1961 RN1962 RN1963 RN1965 RN1966 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 mon) JEDEC ― JEITA ― TOSHIBA 2-2J1B Weight: 6.8 mg (typ.) Equivalent Circuit (Top View) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter...