RN2116MFV Datasheet | Toshiba

RN2114MFV to RN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2114MFV, RN2115MFV, RN2116MFV RN2117MFV, RN2118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm - Ultra-small package, suited to very high density mounting - Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more pact equipment and lowering assembly cost. - A wide range of resistor values is available for use in various circuits. - plementary to the RN1114MFV to RN1118MFV Equivalent Circuit and Bias Resistor Values Type No. RN2114MFV RN2115MFV RN2116MFV RN2117MFV RN2118MFV R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 10 10 4.7 10 Absolute Maximum Ratings (Ta = 25°C) 1.BASE VESM 2.EMITTER 3.COLLECTOR JEDEC ― JEITA ― TOSHIBA 1-1Q1S Weight: 1.5 mg (typ.) Characteristic Symbol Rating Unit Collector-base voltage RN2114MFV VCBO - 50 V to Collector-emitter voltage RN2118MFV VCEO -...