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RN2313 - Silicon PNP Epitaxial Type Transistor

Download the RN2313 datasheet PDF. This datasheet also covers the RN2312 variant, as both devices belong to the same silicon pnp epitaxial type transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (RN2312-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RN2313
Manufacturer Toshiba
File Size 0.97 MB
Description Silicon PNP Epitaxial Type Transistor
Datasheet download datasheet RN2313 Datasheet

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Other Datasheets by Toshiba

Part Number Description
RN2310 Silicon PNP Epitaxial Type Transistors
RN2311 Silicon PNP Epitaxial Type Transistors
RN2312 Silicon PNP Epitaxial Type Transistor
RN2314 Silicon PNP Epitaxial Type Transistor
RN2315 Silicon PNP Epitaxial Type Transistor

Full PDF Text Transcription

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RN2312, RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2312, RN2313 Switching, Inverter Circuit, Interface Circuit and Driver Circuit  With built-in bias resistors.  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment.  Various resistance values are available to suit various circuit designs.  Complementary to RN1312 to RN1313 Equivalent Circuit Unit: mm Absolute Maximum Ratings (Ta = 25°C) USM JEDEC ― JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006g (typ.
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