RN2607 Datasheet | Toshiba

RN2607,RN2608 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2607, RN2608 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm - Including two devices in SM6 (super mini type with 6 leads) - With built-in bias resistors. - Simplify circuit design - Reduce a quantity of parts and manufacturing process and miniaturize equipment. - Various resistance values are available to suit various circuit designs. - plementary to RN1607,RN1608 Equivalent Circuit and Bias Resistor Values SM6 JEDEC ― JEITA ― TOSHIBA 2-3N1A Weight: 0.015 g (typ.) Part No RN2607 RN2608 R1 (kΩ) 10 22 R2 (kΩ) 47 47 Internal Circuit (top view) © 2019 Toshiba Electronic Devices & Storage Corporation Start of mercial production 1988-11 2019-11-11 RN2607,RN2608 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 mon) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage RN2607 RN2608 Collector...