| Title | 트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드 2 PNP - 사전 바이어싱됨(이중) 50V 100mA 200MHz 300mW 표면 실장 SM6 |
| Description | RN2607,RN2608 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2607, RN2608 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipm... |
| Features |
2607 RN2608
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
−50
V
VCEO
−50
V
−6
VEBO
V
−7
IC
−100
mA
PC*
300
mW
Tj
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in t...
|
| Datasheet |
 RN2607 Datasheet - 752.96KB |
| Distributor |
DigiKey |
| Stock | 4 In stock |
| Price |
1000 units: 141.248 KRW 500 units: 158.904 KRW 100 units: 213.49 KRW 10 units: 339 KRW 1 units: 548 KRW
|
| BuyNow |
 BuyNow - Manufacturer a Toshiba America Electronic Components RN2607(TE85L,F)
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
DigiKey |
1000 units: 141.248 KRW 500 units: 158.904 KRW 100 units: 213.49 KRW 10 units: 339 KRW 1 units: 548 KRW |
BuyNow |
|
 Mouser Electronics |
1 units: 0.43 USD 10 units: 0.303 USD 100 units: 0.132 USD 1000 units: 0.086 USD 3000 units: 0.07 USD 9000 units: 0.058 USD 24000 units: 0.056 USD 45000 units: 0.048 USD 99000 units: 0.046 USD |
