RN2610
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
Switching, Inverter Circuit, Interface Circuit and Driver Circuit
Unit: mm
- Including twodevices in SM6 (super mini type with 6 leads)
- With built-in bias resistors
- Simplify circuit design
- Reduce a quantity of parts and manufacturing process and miniaturize equipment.
- Various resistance values are available to suit various circuit designs.
- plementary to RN1610
Equivalent Circuit
JEDEC
―
JEITA
―
TOSHIBA
2-3N1A
Weight: 15 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 mon)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC PC- Tj Tstg
- 50
- 50
- 5
- 100 m A
300 m W
°C
- 55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high...
