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Toshiba Electronic Components Datasheet

RN2902FE Datasheet

(RN2901FE - RN2906FE) Transistor Silicon PNP Epitaxial Type

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RN2901FE~RN2906FE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2901FE,RN2902FE,RN2903FE
RN2904FE,RN2905FE,RN2906FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Complementary to RN1901FE~RN1906FE
Equivalent Circuit and Bias Resistor Values
C
Type No.
R1 (kΩ)
R2 (kΩ)
R1
B
E
RN2901FE
RN2902FE
RN2903FE
RN2904FE
RN2905FE
RN2906FE
4.7
10
22
47
2.2
4.7
4.7
10
22
47
47
47
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN2901FE~
RN2906FE
Emitter-base voltage
RN2901FE~
RN2904FE
RN2905FE,
RN2906FE
Collector current
Collector power dissipation RN2901FE~
Junction temperature
RN2906FE
Storage temperature range
Symbol
Rating
VCBO
VCEO
50
50
VEBO
10
5
IC
PC (Note 1)
Tj
Tstg
100
100
150
55~150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-2N1G
Weight:0.003 g (typ.)
Equivalent Circuit
(top view)
654
Q1 Q2
123
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1 2007-11-01
Free Datasheet http://www.datasheet4u.com/


Toshiba Electronic Components Datasheet

RN2902FE Datasheet

(RN2901FE - RN2906FE) Transistor Silicon PNP Epitaxial Type

No Preview Available !

Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
RN2901FE~RN2906FE
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output
capacitance
Input resistor
Resistor ratio
RN2901FE~2906FE
RN2901FE
RN2902FE
RN2903FE
RN2904FE
RN2905FE
RN2906FE
RN2901FE
RN2902FE
RN2903FE
RN2904FE
RN2905FE
RN2906FE
RN2901FE~2906FE
RN2901FE
RN2902FE
RN2903FE
RN2904FE
RN2905FE
RN2906FE
RN2901FE~2904FE
RN2905FE, 2906FE
RN2901FE~2906FE
RN2901FE~2906FE
RN2901FE
RN2902FE
RN2903FE
RN2904FE
RN2905FE
RN2906FE
RN2901FE~2904FE
RN2905FE
RN2906FE
Symbol
ICBO
ICEO
Test Condition
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
IEBO
VEB = −10 V, IC = 0
VEB = −5 V, IC = 0
hFE
VCE = −5 V,
IC = −10 mA
VCE (sat)
IC = −5 mA,
IB = −0.25 mA
VI (ON)
VCE = −0.2 V,
IC = −5 mA
VI (OFF)
fT
Cob
VCE = −5 V,
IC = −0.1 mA
VCE = −10 V,
IC = −5 mA
VCB = −10 V, IE = 0,
f = 1 MHz
R1
R1/R2
Min Typ. Max Unit
⎯ ⎯ −100
nA
⎯ ⎯ −500
0.82 ⎯ −1.52
0.38 ⎯ −0.71
0.17
0.082
0.33
0.15
mA
0.078 ⎯ −0.145
0.074 ⎯ −0.138
30 ⎯ ⎯
50 ⎯ ⎯
70 ⎯ ⎯
80 ⎯ ⎯
80 ⎯ ⎯
80 ⎯ ⎯
⎯ −0.1 0.3 V
1.1 ⎯ −2.0
1.2 ⎯ −2.4
1.3 ⎯ −3.0
V
1.5 ⎯ −5.0
0.6 ⎯ −1.1
0.7 ⎯ −1.3
1.0 ⎯ −1.5
V
0.5 ⎯ −0.8
200 MHz
3
6 pF
3.29 4.7 6.11
7 10 13
15.4 22 28.6
32.9 47 61.1
1.54 2.2 2.86
3.29 4.7 6.11
0.9 1.0 1.1
0.0421 0.0468 0.0515
0.09 0.1 0.11
kΩ
2 2007-11-01
Free Datasheet http://www.datasheet4u.com/


Part Number RN2902FE
Description (RN2901FE - RN2906FE) Transistor Silicon PNP Epitaxial Type
Maker Toshiba
Total Page 8 Pages
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