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Toshiba Electronic Components Datasheet

RN2910AFS Datasheet

(RN2910AFS / RN2911AFS) Transistor Silicon PNP Epitaxial Type

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RN2910AFS pdf
RN2910AFS, RN2911AFS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN2910AFS, RN2911AFS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly costs.
Complementary to the RN1910AFS/RN1911AFS
Equivalent Circuit and Bias Resistor Values
C
0.1±0.05
1.0±0.05
0.8±0.05
Unit: mm
0.1±0.05
16
25
34
R1
B
E
1. EMITTER1
(E1)
2. BASE1
(B1)
3. COLLECTOR2 (C2)
4. EMITTER2
(E2)
5. BASE2
(B2)
fS6 6. COLLECTOR1 (C1)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
VCBO
VCEO
VEBO
IC
PC (Note 1)
Tj
Tstg
50
50
5
80
50
150
55~150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-1F1D
Weight: 0.001 g (typ.)
Equivalent Circuit (top view)
654
Q1 Q2
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) 1 2 3
may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN2910AFS
RN2911AFS
Symbol
ICBO
IEBO
hFE
VCE (sat)
Cob
R1
Test Condition
VCB = −50 V, IE = 0
VEB = −5 V, IC = 0
VCE = −5 V, IC = −1 mA
IC = −5 mA, IB = −0.25 mA
VCB = 10 V, IE = 0, f = 1 MHz
Min
120
3.76
8
Typ. Max Unit
⎯ −100 nA
⎯ −100 nA
400
⎯ −0.15 V
0.9 pF
4.7 5.64 kΩ
10 12
1 2007-11-01
Free Datasheet http://www.datasheet4u.com/


Toshiba Electronic Components Datasheet

RN2910AFS Datasheet

(RN2910AFS / RN2911AFS) Transistor Silicon PNP Epitaxial Type

No Preview Available !

RN2910AFS pdf
RN2910AFS, RN2911AFS
RN2910AFS
-100
IC - VI (ON)
COMMON EMITTER
VCE = -0.2 V
-10
Ta = 100°C
25
-1
-25
RN2910AFS
-10000
IC - VI (OFF)
COMMON EMITTER
VCE = -5 V
-1000
Ta = 100°C
25
-25
-100
-0.1
-0.1
-1 -10
INPUT VOLTAGE  VI (ON) (V)
RN2911AFS
-100
IC - VI (ON)
COMMON EMITTER
VCE = -0.2 V
-10
Ta = 100°C
25
-1
-25
-100
-10
-0.2
-0.4 -0.6 -0.8
-1
INPUT VOLTAGE  VI (OFF) (V)
RN2911AFS
-10000
IC - VI (OFF)
COMMON EMITTER
VCE = -5 V
-1000
Ta = 100°C
25
-25
-1.2
-100
-0.1
-0.1
-1 -10
INPUT VOLTAGE  VI (ON) (V)
-100
-10
-0.2
-0.4 -0.6 -0.8
-1
INPUT VOLTAGE  VI (OFF) (V)
-1.2
2 2007-11-01
Free Datasheet http://www.datasheet4u.com/


Part Number RN2910AFS
Description (RN2910AFS / RN2911AFS) Transistor Silicon PNP Epitaxial Type
Maker Toshiba
Total Page 5 Pages
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RN2910AFS pdf
RN2910AFS Datasheet PDF
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