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Toshiba Electronic Components Datasheet

RN2913FS Datasheet

(RN2912FS / RN2913FS) Transistor Silicon PNP Epitaxial Type

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RN2912FS,RN2913FS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
RN2912FS, RN2913FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Two devices are incorporated into a fine pitch small mold (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Complementary to RN1912FS and RN1913FS
Equivalent Circuit and Bias Resistor Values
0.1±0.05
Unit: mm
1.0±0.05
0.8±0.05
0.1±0.05
16
25
34
C
R1
B
1.EMIITTER1 (E1)
2.BASE1
(B1)
3.COLLECTOR2 (C2)
4.EMITTER2
(E2)
5.BASE2
(B2)
fS6 6.COLLECTOR1 (C1)
E
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
PC (Note 1)
Tj
Tstg
20
20
5
50
50
150
55~150
V
V
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Total rating
JEDEC
JEITA
TOSHIBA
2-1F1D
Weight: 0.001 g (typ.)
Equivalent Circuit
(top view)
654
Q1 Q2
123
1 2007-11-01
Free Datasheet http://www.datasheet4u.com/


Toshiba Electronic Components Datasheet

RN2913FS Datasheet

(RN2912FS / RN2913FS) Transistor Silicon PNP Epitaxial Type

No Preview Available !

RN2912FS,RN2913FS
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN2912FS
RN2913FS
Symbol
ICBO
IEBO
hFE
VCE (sat)
Cob
Test Condition
VCB = −20 V, IE = 0
VEB = −5 V, IC = 0
VCE = −5 V, IC = −1 mA
IC = −5 mA, IB = −0.25 mA
VCB = −10 V, IE = 0, f = 1 MHz
R1
Min Typ. Max Unit
⎯ ⎯ −100 nA
⎯ ⎯ −100 nA
300
⎯ −0.15 V
1.2 pF
17.6 22 26.4
kΩ
37.6 47 56.4
2 2007-11-01
Free Datasheet http://www.datasheet4u.com/


Part Number RN2913FS
Description (RN2912FS / RN2913FS) Transistor Silicon PNP Epitaxial Type
Maker Toshiba
Total Page 6 Pages
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Toshiba





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