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Toshiba Electronic Components Datasheet

RN2961FS Datasheet

(RN2961FS - RN2966FS) Transistor Silicon PNP Epitaxial Type

No Preview Available !

RN2961FS~RN2966FS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2961FS,RN2962FS,RN2963FS
RN2964FS,RN2965FS,RN2966FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Two devices are incorporated into a fine pitch Small Mold (6 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Complementary to RN1961FS~RN1966FS
0.1±0.05
1.0±0.05
0.8±0.05
Unit: mm
0.1±0.05
16
25
34
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Type No.
RN2961FS
RN2962FS
RN2963FS
RN2964FS
RN2965FS
RN2966FS
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
1.EMIITTER1 (E1)
2.EMITTER2
(E2)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.BASE1
(B1)
fS6 6.COLLECTOR1 (C1)
JEDEC
JEITA
TOSHIBA
2-1F1C
Weight: 0.001 g (typ.)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2961FS~2966FS
RN2961FS~2964FS
RN2965FS, 2966FS
RN2961FS~2966FS
Symbol
VCBO
VCEO
VEBO
IC
PC (Note 1)
Tj
Tstg
Rating
20
20
10
5
50
50
150
55~150
Equivalent Circuit
(top view)
Unit 6 5 4
V
V Q1 Q2
V
mA 1 2 3
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1 2007-11-01
Free Datasheet http://www.datasheet4u.com/


Toshiba Electronic Components Datasheet

RN2961FS Datasheet

(RN2961FS - RN2966FS) Transistor Silicon PNP Epitaxial Type

No Preview Available !

RN2961FS~RN2966FS
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Collector output
capacitance
Input resistor
Resistor ratio
RN2961FS~2966FS
RN2961FS
RN2962FS
RN2963FS
RN2964FS
RN2965FS
RN2966FS
RN2961FS
RN2962FS
RN2963FS
RN2964FS
RN2965FS
RN2966FS
RN2961FS~2966FS
RN2961FS
RN2962FS
RN2963FS
RN2964FS
RN2965FS
RN2966FS
RN2961FS~2964FS
RN2965FS, 2966FS
RN2961FS~2966FS
RN2961FS
RN2962FS
RN2963FS
RN2964FS
RN2965FS
RN2966FS
RN2961FS~2964FS
RN2965FS
RN2966FS
Symbol
ICBO
ICEO
Test Condition
VCB = −20 V, IE = 0
VCE = −20 V, IB = 0
IEBO
VEB = −10 V, IC = 0
VEB = −5 V, IC = 0
hFE
VCE = −5 V,
IC = −10 mA
VCE (sat)
IC = −5 mA,
IB = −0.25 mA
VI (ON)
VCE = −0.2 V,
IC = −5 mA
VI (OFF)
Cob
VCE = −5 V,
IC = −0.1 mA
VCB = −10 V, IE = 0,
f = 1 MHz
R1
R1/R2
Min Typ. Max Unit
⎯ ⎯ −100
nA
⎯ ⎯ −500
0.89 ⎯ −1.33
0.41 ⎯ −0.63
0.18 ⎯ −0.29
mA
0.088 ⎯ −0.133
0.085 ⎯ −0.127
0.08 ⎯ −0.121
30 ⎯ ⎯
60 ⎯ ⎯
100
120
120
120
⎯ ⎯ −0.15 V
1.0 ⎯ −2.0
1.0 ⎯ −2.2
1.1 ⎯ −2.7
V
1.2 ⎯ −3.6
0.6 ⎯ −1.1
0.6 ⎯ −1.2
0.8 ⎯ −1.5
V
0.4 ⎯ −0.8
1.2 pF
3.76 4.7 5.64
8 10 12
17.6 22 26.4
37.6 47 56.4
1.76 2.2 2.64
3.76 4.7 5.64
0.8 1.0 1.2
0.0376 0.0468 0.0562
0.08 0.1 0.12
kΩ
2 2007-11-01
Free Datasheet http://www.datasheet4u.com/


Part Number RN2961FS
Description (RN2961FS - RN2966FS) Transistor Silicon PNP Epitaxial Type
Maker Toshiba
Total Page 8 Pages
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RN2961FS Datasheet PDF

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