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Toshiba Electronic Components Datasheet

RN2962CT Datasheet

(RN2961CT - RN2966CT) Transistor Silicon PNP Epitaxial Type

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RN2961CT~RN2966CT
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2961CT,RN2962CT,RN2963CT
RN2964CT,RN2965CT,RN2966CT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
1.0±0.05
0.15±0.03
654
Unit: mm
Two devices are incorporated into a fine pitch Small Mold (6 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count, which
enables the manufacture of ever more compact equipment and saves
assembly cost.
Complementary to RN1961CT to RN1966CT
123
0.35±0.02 0.35±0.02
0.7±0.03
0.075±0.03
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Type No.
RN2961CT
RN2962CT
RN2963CT
RN2964CT
RN2965CT
RN2966CT
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
1.EMIITTER1 (E1)
2.EMITTER2
(E2)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.BASE1
(B1)
CST6 6.COLLECTOR1 (C1)
JEDEC
JEITA
TOSHIBA
2-1K1A
Weight: 1.0 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2961CT to 2966CT
RN2961CT to 2964CT
RN2965CT, 2966CT
RN2961CT to 2966CT
Symbol
VCBO
VCEO
VEBO
IC
PC (Note1)
Tj
Tstg
Rating
20
20
10
5
50
140
150
55 to 150
Equivalent Circuit
(top view)
Unit
V 654
V Q1 Q2
V
123
mA
mW
°C
°C
Note1: Total rating, mounted on glass-epoxy board of 10mm×10mm×1mmt.
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2009-04-17
Free Datasheet http://www.datasheet4u.com/


Toshiba Electronic Components Datasheet

RN2962CT Datasheet

(RN2961CT - RN2966CT) Transistor Silicon PNP Epitaxial Type

No Preview Available !

Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
RN2961CT~RN2966CT
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Collector output
capacitance
Input resistor
Resistor ratio
RN2961CT to 2966CT
RN2961CT
RN2962CT
RN2963CT
RN2964CT
RN2965CT
RN2966CT
RN2961CT
RN2962CT
RN2963CT
RN2964CT
RN2965CT
RN2966CT
RN2961CT~2966CT
RN2961CT
RN2962CT
RN2963CT
RN2964CT
RN2965CT
RN2966CT
RN2961CT to 2964CT
RN2965CT, 2966CT
RN2961CT to 2966CT
RN2961CT
RN2962CT
RN2963CT
RN2964CT
RN2965CT
RN2966CT
RN2961CT to 2964CT
RN2965CT
RN2966CT
Symbol
ICBO
ICEO
Test Condition
VCB = −20 V, IE = 0
VCE = −20 V, IB = 0
IEBO
VEB = −10 V, IC = 0
VEB = −5 V, IC = 0
hFE
VCE = −5 V,
IC = −10 mA
VCE (sat)
IC = −5 mA,
IB = −0.25 mA
VI (ON)
VCE = −0.2 V,
IC = −5 mA
VI (OFF)
Cob
VCE = −5 V,
IC = −0.1 mA
VCB = −10 V, IE = 0,
f = 1 MHz
R1
R1/R2
Min Typ. Max Unit
⎯ ⎯ −100
nA
⎯ ⎯ −500
0.89 ⎯ −1.33
0.41 ⎯ −0.63
0.18 ⎯ −0.29
mA
0.088 ⎯ −0.133
0.085 ⎯ −0.127
0.08 ⎯ −0.121
30 ⎯ ⎯
60 ⎯ ⎯
100
120
120
120
⎯ ⎯ −0.15 V
1.0 ⎯ −2.0
1.0 ⎯ −2.2
1.1 ⎯ −2.7
V
1.2 ⎯ −3.6
0.6 ⎯ −1.1
0.6 ⎯ −1.2
0.8 ⎯ −1.5
V
0.4 ⎯ −0.8
1.2 pF
3.76 4.7 5.64
8 10 12
17.6 22 26.4
37.6 47 56.4
1.76 2.2 2.64
3.76 4.7 5.64
0.8 1.0 1.2
0.0376 0.0468 0.0562
0.08 0.1 0.12
kΩ
2 2009-04-17
Free Datasheet http://www.datasheet4u.com/


Part Number RN2962CT
Description (RN2961CT - RN2966CT) Transistor Silicon PNP Epitaxial Type
Maker Toshiba
Total Page 8 Pages
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