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Toshiba Electronic Components Datasheet

RN2962FE Datasheet

(RN2961FE - RN2966FE) Transistor Silicon PNP Epitaxial Type

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RN2962FE pdf
RN2961FE~RN2966FE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2961FE,RN2962FE,RN2963FE
RN2964FE,RN2965FE,RN2966FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Complementary to RN1961FE~RN1966FE
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Type No.
RN2961FE
RN2962FE
RN2963FE
RN2964FE
RN2965FE
RN2966FE
R1 (k)
4.7
10
22
47
2.2
4.7
R2 (k)
4.7
10
22
47
47
47
JEDEC
JEITA
TOSHIBA
2-2N1A
Weight: 0.003 g (typ.)
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2961FE~2966FE
RN2961FE~2964FE
RN2965FE, 2966FE
RN2961FE~2966FE
Note: Total rating
Symbol
VCBO
VCEO
VEBO
IC
PC (Note)
Tj
Tstg
Rating
50
50
10
5
100
100
150
55~150
Equivalent Circuit
(top view)
Unit 6 5 4
V
V Q1 Q2
V
mA 1 2 3
mW
°C
°C
1 2004-07-01
Free Datasheet http://www.datasheet4u.com/


Toshiba Electronic Components Datasheet

RN2962FE Datasheet

(RN2961FE - RN2966FE) Transistor Silicon PNP Epitaxial Type

No Preview Available !

RN2962FE pdf
RN2961FE~RN2966FE
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output
capacitance
Input resistor
Resistor ratio
RN2961FE~2966FE
RN2961FE
RN2962FE
RN2963FE
RN2964FE
RN2965FE
RN2966FE
RN2961FE
RN2962FE
RN2963FE
RN2964FE
RN2965FE
RN2966FE
RN2961FE~2966FE
RN2961FE
RN2962FE
RN2963FE
RN2964FE
RN2965FE
RN2966FE
RN2961FE~2964FE
RN2965FE, 2966FE
RN2961FE~2966FE
RN2961FE~2966FE
RN2961FE
RN2962FE
RN2963FE
RN2964FE
RN2965FE
RN2966FE
RN2961FE~2964FE
RN2965FE
RN2966FE
Symbol
ICBO
ICEO
Test Condition
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
IEBO
VEB = −10 V, IC = 0
VEB = −5 V, IC = 0
hFE
VCE = −5 V,
IC = −10 mA
VCE (sat)
IC = −5 mA,
IB = −0.25 mA
VI (ON)
VCE = −0.2 V,
IC = −5 mA
VI (OFF)
fT
Cob
VCE = −5 V,
IC = −0.1 mA
VCE = −10 V,
IC = −5 mA
VCB = −10 V, IE = 0,
f = 1 MHz
R1
R1/R2
Min Typ. Max Unit
⎯ ⎯ −100
nA
⎯ ⎯ −500
0.82 ⎯ −1.52
0.38 ⎯ −0.71
0.17
0.082
0.33
0.15
mA
0.078 ⎯ −0.145
0.074 ⎯ −0.138
30 ⎯ ⎯
50 ⎯ ⎯
70 ⎯ ⎯
80 ⎯ ⎯
80 ⎯ ⎯
80 ⎯ ⎯
⎯ −0.1 0.3
V
1.1 ⎯ −2.0
1.2 ⎯ −2.4
1.3 ⎯ −3.0
1.5 ⎯ −5.0
0.6 ⎯ −1.1
0.7 ⎯ −1.3
1.0 ⎯ −1.5
0.5 ⎯ −0.8
V
V
200 MHz
3
6 pF
3.29 4.7 6.11
7 10 13
15.4 22 28.6
32.9 47 61.1
1.54 2.2 2.86
3.29 4.7 6.11
0.9 1.0 1.1
0.0421 0.0468 0.0515
0.09 0.1 0.11
k
2 2004-07-01
Free Datasheet http://www.datasheet4u.com/


Part Number RN2962FE
Description (RN2961FE - RN2966FE) Transistor Silicon PNP Epitaxial Type
Maker Toshiba
Total Page 8 Pages
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RN2962FE pdf
RN2962FE Datasheet PDF
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