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Toshiba Electronic Components Datasheet

RN2967FS Datasheet

(RN2967FS - RN2969FS) Transistor Silicon PNP Epitaxial Type

No Preview Available !

RN2967FS pdf
RN2967FS~RN2969FS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2967FS,RN2968FS,RN2969FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Two devices are incorporated into a fine pitch Small Mold (6 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Complementary to RN1967FS~RN1969FS
Equivalent Circuit and Bias Resistor Values
0.1±0.05
Unit: mm
1.0±0.05
0.8±0.05
0.1±0.05
16
25
34
C
R1
B
E
Type No.
RN2967FS
RN2968FS
RN2969FS
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
1.EMIITTER1 (E1)
2.EMITTER2
(E2)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.BASE1
(B1)
fS6 6.COLLECTOR1 (C1)
JEDEC
JEITA
TOSHIBA
2-1F1C
Weight: 0.001 g (typ.)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN2967FS~
RN2969FS
RN2967FS
Emitter-base voltage
RN2968FS
RN2969FS
Collector current
Collector power dissipation RN2967FS~
Junction temperature
RN2969FS
Storage temperature range
Symbol
Rating
VCBO
VCEO
VEBO
IC
PC (Note 1)
Tj
Tstg
20
20
6
7
15
50
50
150
55~150
Unit
V
V
V
mA
mW
°C
°C
Equivalent Circuit
(top view)
654
Q1 Q2
123
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1 2007-11-01
Free Datasheet http://www.datasheet4u.com/


Toshiba Electronic Components Datasheet

RN2967FS Datasheet

(RN2967FS - RN2969FS) Transistor Silicon PNP Epitaxial Type

No Preview Available !

RN2967FS pdf
RN2967FS~RN2969FS
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Collector output
capacitance
Input resistor
Resistor ratio
RN2967FS~2969FS
RN2967FS
RN2968FS
RN2969FS
RN2967FS
RN2968FS
RN2969FS
RN2967FS~2969FS
RN2967FS
RN2968FS
RN2969FS
RN2967FS
RN2968FS
RN2969FS
RN2967FS~2969FS
RN2967FS
RN2968FS
RN2969FS
RN2967FS
RN2968FS
RN2969FS
Symbol
ICBO
ICEO
IEBO
Test Condition
VCB = −20 V, IE = 0
VCE = −20 V, IB = 0
VEB = −6 V, IC = 0
VEB = −7 V, IC = 0
VEB = −15 V, IC = 0
hFE VCE = −5 V,
IC = −10 mA
VCE (sat)
IC = −5 mA,
IB = −0.25 mA
VI (ON)
VCE = −0.2 V,
IC = −5mA
VI (OFF)
VCE = −5 V,
IC = −0.1mA,
Cob
VCB = −10 V, IE = 0,
f = 1 MHz
R1
R1/R2
Min Typ. Max Unit
⎯ ⎯ −100
nA
⎯ ⎯ −500
0.088 ⎯ −0.131
0.085 ⎯ −0.126 mA
0.182 ⎯ −0.271
120
120
100
⎯ ⎯ 0.15 V
0.7 1.5
0.8 2.2
1.6 5.0
0.5 1.0
0.6 1.1
1.3 2.6
V
V
1.2 pF
8
17.6
37.6
0.17
0.374
1.71
10
22
47
0.213
0.468
2.14
12
26.4
56.4
0.255
0.562
2.56
kΩ
2 2007-11-01
Free Datasheet http://www.datasheet4u.com/


Part Number RN2967FS
Description (RN2967FS - RN2969FS) Transistor Silicon PNP Epitaxial Type
Maker Toshiba
Total Page 6 Pages
PDF Download
RN2967FS pdf
RN2967FS Datasheet PDF
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