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Toshiba Electronic Components Datasheet

RN2968FE Datasheet

(RN2967FE - RN2969FE) Transistor Silicon PNP Epitaxial Type

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RN2968FE pdf
RN2967FE~RN2969FE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2967FE,RN2968FE,RN2969FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Complementary to RN1967FE~RN1969FE
Equivalent Circuit and Bias Resistor Values
C
R1
B
Type No.
RN2967FE
RN2968FE
RN2969FE
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
E
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
RN2967FE
Emitter-base voltage RN2968FE
RN2969FE
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
PC (Note 1)
Tj
Tstg
50
50
6
7
15
100
100
150
55~150
V
V
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
JEDEC
JEITA
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
Equivalent Circuit
(top view)
654
Q1 Q2
123
1 2011-01-19
Free Datasheet http://www.datasheet4u.com/


Toshiba Electronic Components Datasheet

RN2968FE Datasheet

(RN2967FE - RN2969FE) Transistor Silicon PNP Epitaxial Type

No Preview Available !

RN2968FE pdf
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
RN2967FE~RN2969FE
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output
capacitance
Input resistor
Resistor ratio
RN2967FE~2969FE
RN2967FE
RN2968FE
RN2969FE
RN2967FE
RN2968FE
RN2969FE
RN2967FE~2969FE
RN2967FE
RN2968FE
RN2969FE
RN2967FE
RN2968FE
RN2969FE
RN2967FE~2969FE
RN2967FE~2969FE
RN2967FE
RN2968FE
RN2969FE
RN2967FE
RN2968FE
RN2969FE
Symbol
ICBO
ICEO
IEBO
Test Condition
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VEB = −6 V, IC = 0
VEB = −7 V, IC = 0
VEB = −15 V, IC = 0
hFE
VCE = −5 V,
IC = −10 mA
VCE (sat)
IC = −5 mA,
IB = −0.25 mA
VI (ON)
VCE = −0.2 V,
IC = −5 mA
VI (OFF)
VCE = −5 V,
IC = −0.1 mA
fT
VCE = −10 V,
IC = −5 mA
Cob
VCB = −10 V, IE = 0,
f = 1 MHz
R1
R1/R2
Min Typ. Max Unit
⎯ ⎯ −100
nA
⎯ ⎯ −500
0.081 ⎯ −0.15
0.078 ⎯ −0.145 mA
0.167 ⎯ −0.311
80 ⎯ ⎯
80 ⎯ ⎯
70 ⎯ ⎯
⎯ −0.1 0.3 V
0.7 ⎯ −1.8
1.0 ⎯ −2.6 V
2.2 ⎯ −5.8
0.5 ⎯ −1.0
0.6 ⎯ −1.16 V
1.5 ⎯ −2.6
200 MHz
3
6
7
15.4
32.9
0.191
0.421
1.92
10
22
47
0.213
0.468
2.14
13
28.6
61.1
0.232
0.515
2.35
pF
kΩ
2 2011-01-19
Free Datasheet http://www.datasheet4u.com/


Part Number RN2968FE
Description (RN2967FE - RN2969FE) Transistor Silicon PNP Epitaxial Type
Maker Toshiba
Total Page 6 Pages
PDF Download
RN2968FE pdf
RN2968FE Datasheet PDF
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