S1298 - NPN Transistor

Datasheet Summary

Features

. High Collector-Emitter Breakdown Voltage . Low C cb (2.5pF Typ. ) V CEO=300V Unit in ram 9.9MAX. j#3.2±0.2 (ffV°.

Toshiba

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Datasheet Details

Part number	S1298
Manufacturer	Toshiba
File Size	104.05 KB
Description	NPN Transistor
Datasheet	S1298 Datasheet
Additional preview pages of the S1298 datasheet.

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Full PDF Text Transcription

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SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) COLOR TV CHROMA OUTPUT APPLICATIONS. FEATURES . High Collector-Emitter Breakdown Voltage . Low C cb (2.5pF Typ.) V CEO=300V Unit in ram 9.9MAX. j#3.2±0.2 (ffV° MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25"OrC Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VeBO IC IB L stg RATING 300 300 100 50 1.5 6.25 150 -55-150 UNIT V mA mA 1. EMITTER 2. BASE 3. COLLECTOR (HEAT SINK) TQ-202 TOSHIBA 2-10D1A Weight : 1.

Published: Jul 16, 2018 |