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Toshiba Electronic Components Datasheet

S1298 Datasheet

SILICON NPN TRIPLE DIFFUSED TYPE

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SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
COLOR TV CHROMA OUTPUT APPLICATIONS.
FEATURES
. High Collector-Emitter Breakdown Voltage
. Low C cb (2.5pF Typ.)
V CEO=300V
Unit in ram
9.9MAX. j#3.2±0.2
(ff
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power
Dissipation
Ta=25°C
Tc=25"OrC
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VeBO
IC
IB
L stg
RATING
300
300
100
50
1.5
6.25
150
-55-150
UNIT
V
mA
mA
1. EMITTER
2. BASE
3. COLLECTOR (HEAT SINK)
TQ-202
TOSHIBA
2-10D1A
Weight : 1.4g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
lEBO
DC Current Gain
Collector-Emitter
Saturation Voltage
Transition Frequency
Collector-Base Capacitance
h FE(l)
h FE(2)
v CE(sat)
fT
Ccb
TEST CONDITION
V CB=300V, I E=0
VEB=7V, I C=0
V CE=10V, I C=4mA
V CE=10V, I c=20mA
IC=10mA, lB=lmA
VCE=10V, I G=20mA
VCB =20V, I E=0, f=lMHz
MIN.
-
-
20
30
TYP.
-
-
-
-
MAX. UNIT
M10
10 juA
-
150
- - 1.0 V
50 70
- MHz
- 2.5 3.0 PF
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-1079-


Toshiba Electronic Components Datasheet

S1298 Datasheet

SILICON NPN TRIPLE DIFFUSED TYPE

No Preview Available !

SI 298
I 3 ~ v :e
140
COMMON EMITTER
Tc=25°C
190
10 8 6
4
inn
2,
Rn
0.8 _
60
06
an
0.4
1
I B = C.2mA
1
4 8 12 16 20 24
COLLECTOR -EMITTER VOLTAGE V CE (V)
h FE I C
Tc = 100 °C
25
-
o*"iJ!
-H
V CE = 10 V
>"V.
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1
35
10
30 50 100 200
COLLECTOR CURRENT I c (mA)
v CE(sat) ic
10
- COMMON EMITTER
5
"
I C /I B =10
3 " Tc-25°C
1
0.5
0.3
0.1
30 50 100
COLLECTOR CURRENT I c (mA)
-c ct>
VC]
iE = o
t = 1MHz
Tc= 25°C
30 50 100
COLLECTOR-BASE VOLTAGE VCB (V)
TOSHIBA CORPORATION llllllllllll
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Part Number S1298
Description SILICON NPN TRIPLE DIFFUSED TYPE
Maker Toshiba
Total Page 3 Pages
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