Datasheet4U Logo Datasheet4U.com

S1298 - NPN Transistor

Key Features

  • . High Collector-Emitter Breakdown Voltage . Low C cb (2.5pF Typ. ) V CEO=300V Unit in ram 9.9MAX. j#3.2±0.2 (ffV°.

📥 Download Datasheet

Datasheet Details

Part number S1298
Manufacturer Toshiba
File Size 104.05 KB
Description NPN Transistor
Datasheet download datasheet S1298 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) COLOR TV CHROMA OUTPUT APPLICATIONS. FEATURES . High Collector-Emitter Breakdown Voltage . Low C cb (2.5pF Typ.) V CEO=300V Unit in ram 9.9MAX. j#3.2±0.2 (ffV° MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25"OrC Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VeBO IC IB L stg RATING 300 300 100 50 1.5 6.25 150 -55-150 UNIT V mA mA 1. EMITTER 2. BASE 3. COLLECTOR (HEAT SINK) TQ-202 TOSHIBA 2-10D1A Weight : 1.