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S1732
;
2
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS. TV HORIZONTAL DRIVER APPLICATIONS.
Unit in mm
<19MAX.
,'
^J
3.2 ±;0.
M aM
H
n
-1 r
00 c
w
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Pov/er Dissipation
Ta=25 C Tc=25 C
Junction Temperature
Storage Temperature Range
SYMBOL 'CBO 'CEO
'EBO ic IB
stg
RATING 200 120
800 500 1.5 6.25 150
-55-150
UNIT
mA mA
_
i
1.2
n
!zi
j
I
a
0.66
2.54 U
3
2.54 ^H ci.8
Tl 2_3< ~
c.-.*ntn ~aco —mt.ii
X
i T
'
1. EMITTER 2. BASE 3. COLLECTOR (HEAT SINK)
TOSHIBA
2-10P1A
Weight : 1 .
S1732 Datasheet
