900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Toshiba Electronic Components Datasheet

S1732 Datasheet

SILICON NPN EPITAXIAL TYPE

No Preview Available !

S1732
2;
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS.
TV HORIZONTAL DRIVER APPLICATIONS.
Unit in mm
<19MAX.
,'
^J
n -1
r
3.2 ±;0.
M
aM
H
00
w
c
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Pov/er
Dissipation
Ta=25 C
Tc=25 C
Junction Temperature
Storage Temperature Range
SYMBOL
'CBO
'CEO
'EBO
ic
IB
stg
RATING
200
120
800
500
1.5
6.25
150
-55-150
UNIT
mA
mA
1.2
i
j
I
0.66
n
_
!zi
a
2.54
U
3
2.54
^H
ci.8
Tl 2_3<
c.-.*ntn ~aco mt.ii
X
iT
'
~
1. EMITTER
2. BASE
3. COLLECTOR (HEAT SINK)
TOSHIBA
2-10P1A
Weight : 1 . 4g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter
Breakdown Voltage
DC Current Gain
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
SYMBOL
I CB0
lEBO
TEST CONDITION
V CB=200V, I E=0
V EB =6V, I C =0
v (BR) CEO I c =10mA, I B =0
hFE(l) VCE=5V, I c=100mA
hFE(2) VCE=5V, I c =400mA
vCE(sat) I c =500mA, I B=50mA
VBE(sat) I C= 500mA, I B =50mA
MIN.
-
-
TYP.
-
-
MAX. UNIT
10 fik
1 lik
120 - - V
60 - 250
40 -
-
--
1V
- - 1.5 V
Transition Frequency
Collector Output Capacitance
fT
Cob
Vce=5v » lE=100mA
VcB=L0V, IE=0, f=lMHz
30 50
--
- MHz
30 pF
TOSHIBA CORPORATION
-1088-


Toshiba Electronic Components Datasheet

S1732 Datasheet

SILICON NPN EPITAXIAL TYPE

No Preview Available !

)
S1732
V CE
1000
COMMON EMITTER
15 Tc = 25°C
10^ J7„
5
4
3
2
Ig = 1mA
1
COLLECTOR -EMITTER VOLTAOE V GE (V)
v CE(sat) - Ic
: COMMON EMITTER
" I C /I B =10
a w o.i
H>
K 0.05
O
H£-<
o S 0.03
Tc - 1 OC)°C
v 25
\ -25
j\
' //
..^d3^
3 5 10
30 50 100
300 500 1000
COLLECTOR CURRENT I c (mA)
Ta
3
6
0) T c = Ta
INFINITE HEAT SINK
© NO HEAT SINK
4
h FE ~ I C
To = 100°C
II
25
-25
VCE -5V
-N
*>
N
\<<;
^
V\
35
10
30 50 100
300 500 1000
COLLECTOR CURRENT I c (mA)
I c - V BE
800
COMMON EMITTER
VCE =5V
600
/
/
/
400
oo//
"V /
'/ /
«?r
NlO /
Oil 1
/1
200
n
a2 0.4 0.6
0.8
BASE -EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
mi
i
- I c MAA. ^±^UJ-itJii;iJ J •*
"I'
'
I c MAX. 1
-(CONTINUOUS
500
^%v300 4,
& Xs* \ ^
\^v
V.^V
1.0
**
®
n
40 80 120
AMBIENT TEMPERATURE Ta (°C)
- -X; SINGLE NONREPETITIVE
PULSE Tc = 25°C
X
. CURVES MUST BE DERATED ^
LINEARLY WITH INCREASE
o
I N T EMI'ERATURE3
>o
_U i
iLJ_1_.
35
10
30 50
100
300
COLLECTOR -EMITTER VOLTAGE Vn E (V)
T~C:S^^a—^^^E9^ CORPORATIOIMIlllltlllllllllllllllltlltllllllllllllllllllllltllllllCtllllllltltliiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiitlllllllllllllllllllllltaitllllllllllllllltllllllltllllllllllllllllllllllllltllllllllllllf lllllllllllllllllillllllttlit
-1089-


Part Number S1732
Description SILICON NPN EPITAXIAL TYPE
Maker Toshiba
Total Page 2 Pages
PDF Download

S1732 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 S1732 SILICON NPN EPITAXIAL TYPE
Toshiba





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy