Datasheet4U Logo Datasheet4U.com

SSM6K217FE Datasheet Silicon N-channel MOSFET

Manufacturer: Toshiba

Overview: MOSFETs Silicon N-Channel MOS SSM6K217FE 1. Applications • Power Management Switches • DC-DC Converters 2.

Key Features

  • (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 155 mΩ (typ. ) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 165 mΩ (typ. ) (@VGS = 4.5 V, ID = 1.0 A) RDS(ON) = 170 mΩ (typ. ) (@VGS = 3.6 V, ID = 1.0 A) RDS(ON) = 190 mΩ (typ. ) (@VGS = 2.5 V, ID = 0.5 A) RDS(ON) = 230 mΩ (typ. ) (@VGS = 1.8 V, ID = 0.2 A) 3. Packaging and Pin Assignment ES6 SSM6K217FE 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6; Drain Start of commercial production 2014-02 1 2014-03-12 Rev.1.0 SSM6K217FE.

More Datasheets from Toshiba

Part Number Description
SSM6K341NU Silicon N-Channel MOSFET
SSM6K361NU Silicon N-Channel MOSFET
SSM6K513NU Silicon N-Channel MOSFET
SSM6K514NU Silicon N-Channel MOSFET
SSM6K516NU Silicon N-Channel MOSFET
SSM6K517NU Silicon N-Channel MOSFET
SSM6K518NU Silicon N-Channel MOSFET
SSM6K781G Silicon N-Channel MOSFET
SSM6K804R Silicon N-Channel MOSFET
SSM6K809R Silicon N-Channel MOSFET

SSM6K217FE Distributor