Datasheet Summary
MOSFETs Silicon N-Channel MOS
1. Applications
- Power Management Switches
- DC-DC Converters
2. Features
(1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 155 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 165 mΩ (typ.) (@VGS = 4.5 V, ID = 1.0 A) RDS(ON) = 170 mΩ (typ.) (@VGS = 3.6 V, ID = 1.0 A) RDS(ON) = 190 mΩ (typ.) (@VGS = 2.5 V, ID = 0.5 A) RDS(ON) = 230 mΩ (typ.) (@VGS = 1.8 V, ID = 0.2 A)
3. Packaging and Pin Assignment
ES6
1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6; Drain
Start of mercial production
2014-02
2014-03-12
Rev.1.0
4....