SSM6K217FE mosfet equivalent, silicon n-channel mosfet.
(1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 155 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 165 mΩ (typ.) (@VGS = 4.5 V, ID = 1.0 A) R.
* Power Management Switches
* DC-DC Converters
2. Features
(1) 1.8-V gate drive voltage. (2) Low drain-source on.
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