SSM6K516NU - Silicon N-Channel MOSFET

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Toshiba

Part number	SSM6K516NU
Manufacturer	Toshiba
File Size	283.72 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM6K516NU Datasheet
Additional preview pages of the SSM6K516NU datasheet.

(1) 4.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 46 mΩ (max) (@VGS = 10 V) RDS(ON) = 64 mΩ (max) (@VGS = 4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6K516NU 1, 2, 5, 6: Drain 3: Gate 4: Source ©2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2020-04 2020-06-02 Rev.2.0 SSM6K516NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage.

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Published: Dec 15, 2023 |