Datasheet Summary
MOSFETs Silicon N-Channel MOS (U-MOS-H)
1. Applications
- Power Management Switches
- High-Speed Switching
2. Features
(1) 1.8-V drive (2) Low drain-source on-resistance
: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V)
3. Packaging and Pin Assignment
UDFN6B
1, 2, 5, 6: Drain 3: Gate 4: Source
©2020 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2020-04
2020-06-02 Rev.3.0
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