SSM6K781G - Silicon N-Channel MOSFET

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Toshiba

Part number	SSM6K781G
Manufacturer	Toshiba
File Size	226.16 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM6K781G Datasheet
Additional preview pages of the SSM6K781G datasheet.

(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 17.9 mΩ (typ. ) (@VGS = 2.5 V, ID = 1.5 A) RDS(ON) = 14.4 mΩ (typ. ) (@VGS = 4.5 V, ID = 1.5 A) 3. Packaging and Pin Assignment SSM6K781G WCSP6C A1: Drain A2: Gate B1: Drain B2: Source C1: Drain C2: Source 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS 12 V Gate-source voltage VGSS ±8 Drain current (DC) (Note 1) ID.

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Published: Dec 15, 2023 |