SSM6K781G mosfet equivalent, silicon n-channel mosfet.
(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 17.9 mΩ (typ.) (@VGS = 2.5 V, ID = 1.5 A) RDS(ON) = 14.4 mΩ (typ.) (@VGS = 4.5 V, ID = 1.5 A).
* Power Management Switches
2. Features
(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) =.
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