SSM6N35AFE mosfet equivalent, silicon n-channel mosfet.
(1) 1.2 V drive (2) Low drain-source on-resistance
: RDS(ON) = 9.0 Ω (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 Ω (max) (@VGS = 1.5 V, ID = 20 mA) RDS(ON) = 2.4 Ω (ma.
* High-Speed Switching
* Analog Switches
2. Features
(1) 1.2 V drive (2) Low drain-source on-resistance
: RDS(ON.
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