ST1000GXH35 - Silicon N-Channel IEGT

Toshiba

Datasheet Details

(1) High reliability due to hermetic sealing structure. (2) Double side cooling type. 3. Packaging and Internal Circuit ST1000GXH35 ©2023-2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2024-02 2024-03-19 Rev.1.0 ST1000GXH35 4. Absolute Maximum Ratings (Note) (Tc = 25.
, unless otherwise specified) Characteristics Symbol Note Test Condition Rating Unit Collector-emitter voltage VCES 4500 V Gate-emitter voltage VGES ±20 V Collector c.

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