| Description | : SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS. FEATURES . High VqeO High hpE Low Noise 65V (TBC546) 45V (TBC547) 30V (TBC548) 110-800 TBC546 TBC547 TBC548 Unit in mm 5.1 MAX. r -i . MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC546 TBC547 v (BR)CBO TBC548 Collector-Emitter Breakdown Vol... |
| Features |
. High VqeO
High hpE Low Noise
65V (TBC546) 45V (TBC547) 30V (TBC548)
110-800
TBC546 TBC547 TBC548
Unit in mm
5.1 MAX.
r
-i
.
MAXIMUM RATINGS (Ta=25 C)
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
TBC546 TBC547 v (BR)CBO TBC548
Collector-Emitter Breakdown Voltage
TBC546 TBC547 V (BR) CEO TBC548
Emitter-Base Breakdown Voltag...
|
| Datasheet |
 TBC548 Datasheet 52.49KB |
