TBC560 - Silicon PNP Transistor

Toshiba

Download the TBC560 datasheet PDF. This datasheet also covers the TBC559 variant, as both devices belong to the same silicon pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

. High V CE0 : -45V (TBC560) -25V (TBC559) . High hFE = 125-475 Unit in mm 5. 1 MAX. , 1 : < S t- 0.45 I'] O. E35 MAX. 1 r J C.45 1! m r s CO 00 A c! r- r-t 1.27 m / 1.27 X 23J.

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TBC560 silicon pnp transistor by Toshiba - Datasheet Preview — Note: The manufacturer provides a single datasheet file (TBC559-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	TBC560
Manufacturer	Toshiba
File Size	53.07 KB
Description	Silicon PNP Transistor
Datasheet	TBC560 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
TBC546	Silicon NPN Transistor
TBC547	Silicon NPN Transistor
TBC548	Silicon NPN Transistor
TBC549	Silicon NPN Transistor
TBC550	Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC559 TBC560 PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS. THE TBC559 AND TBC560 IS LOW NOISE TYPE FOR INPUT STAGE OF AUDIO AMPLIFIERS. FEATURES . High V CE0 : -45V (TBC560) -25V (TBC559) . High hFE = 125-475 Unit in mm 5. 1 MAX. , 1 : < S t- 0.45 I'] O.E35 MAX. 1 r J C.45 1! m r s CO 00 A c! r- r-t 1.27 m / 1.