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TBC560 - Silicon PNP Transistor

This page provides the datasheet information for the TBC560, a member of the TBC559 Silicon PNP Transistor family.

Datasheet Summary

Features

  • . High V CE0 : -45V (TBC560) -25V (TBC559) . High hFE = 125-475 Unit in mm 5. 1 MAX. , 1 : < S t- 0.45 I'] O. E35 MAX. 1 r J C.45 1! m r s CO 00 A c! r- r-t 1.27 m / 1.27 X 23J.

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Datasheet preview – TBC560

Datasheet Details

Part number TBC560
Manufacturer Toshiba
File Size 53.07 KB
Description Silicon PNP Transistor
Datasheet download datasheet TBC560 Datasheet
Additional preview pages of the TBC560 datasheet.

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Full PDF Text Transcription

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SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC559 TBC560 PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS. THE TBC559 AND TBC560 IS LOW NOISE TYPE FOR INPUT STAGE OF AUDIO AMPLIFIERS. FEATURES . High V CE0 : -45V (TBC560) -25V (TBC559) . High hFE = 125-475 Unit in mm 5. 1 MAX. , 1 : < S t- 0.45 I'] O.E35 MAX. 1 r J C.45 1! m r s CO 00 A c! r- r-t 1.27 m / 1.
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