TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC4W66FU
TC4W66FU
Dual Bilateral Switch
The TC4W66FU contains two independence circuits of
bidirectional switches.
When control input CONT is set to “H” level, the impedance
between input and output of the switch becomes low and when it
is set to “L” level, the switch becomes high. This can be applied
for switching of analog signals and digital signals.
Features
• ON-resistance, RON
250 Ω (typ.) ................... VDD − VSS = 5 V
110 Ω (typ.) ................... VDD − VSS = 10 V
70 Ω (typ.) ..................... VDD − VSS = 15 V
• OFF-resistance, ROFF
ROFF (typ.) > 109 Ω
Weight
SSOP8-P-0.65 : 0.02 g (typ.)
(SM8)
Absolute Maximum Ratings (Ta = 25°C)
Marking
Characteristics
Symbol
Rating
Unit
DC supply voltage
Control input voltage
Switch I/O voltage
Power dissipation
Potential difference across I/O during
ON
VDD
VC IN
VI/O
PD
VI-VO
VSS − 0.5 to VSS + 20
V
VSS − 0.5 to VDD + 0.5
V
VSS − 0.5 to VDD + 0.5
V
300
mW
±0.5
V
4W66
Type Name
Lot No.
Control input current
Operating temperature range
Storage temperature
Lead temperature (10 s)
IC IN
Topr
Tstg
TL
±10
mA
−40 to 85
°C
−65 to 150
°C
260
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1989-12
1
2014-11-18
