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TC511002J-12 Datasheet DRAM

Manufacturer: Toshiba

Overview: TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS TC511002P/J/Z-85, TC511002P/J/Z-l0.

Download the TC511002J-12 datasheet PDF. This datasheet also includes the TC511002P-85 variant, as both parts are published together in a single manufacturer document.

General Description

The TC5ll002P/J/Z is the new generation dynamic RA}!

organized 1,048,576 words by 1 bit.

The TC5ll002P/J/Z utilizes TOSHIBA's CXOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.

Key Features

  • include single power supply of 5V±10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. "Test Mode" function is implemented from Revision C.