TC511002P-12 Datasheet PDF - Toshiba DRAM Specs

TC511002P-12 - DRAM

This page provides the datasheet information for the TC511002P-12, a member of the TC511002P-85 DRAM family.

Datasheet Summary

Description

The TC5ll002P/J/Z is the new generation dynamic RA}!

organized 1,048,576 words by 1 bit.

The TC5ll002P/J/Z utilizes TOSHIBA's CXOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.

Features

include single power supply of 5V±10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. "Test Mode" function is implemented from Revision C.

Datasheet Details

Part number	TC511002P-12
Manufacturer	Toshiba
File Size	627.03 KB
Description	DRAM
Datasheet	TC511002P-12 Datasheet
Additional preview pages of the TC511002P-12 datasheet.

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Full PDF Text Transcription

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TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS TC511002P/J/Z-85, TC511002P/J/Z-l0 TC511002P/J/Z-12 DESCRIPTION The TC5ll002P/J/Z is the new generation dynamic RA}! organized 1,048,576 words by 1 bit. The TC5ll002P/J/Z utilizes TOSHIBA's CXOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs permit the TC5ll002P/J/Z to be packaged in a standard 18 pin plastic DIP,.26/20 pin plastic SOJ and 20/19 pin plastic ZIP. The package size provides system bit densities and is compatible with ~videly available automated testing and insertion equipment.

Published: Jan 18, 2017 |